Since the advent of the first silicon-based integrated circuit in 1958, under the guidance of Moore's Law, the feature size of silicon-based devices has been continuously reduced and the integration level has been continuously improved. Due to the inherent limitations of silicon materials, the development of silicon-based chips has encountered the triple effect of consumption walls, storage walls, and size reduction effects. In order to prepare a new generation chip with low contact resistance, high frequency and high integration, researchers need to find an ultra-thin material with excellent interface, high mobility and stable physical and chemical properties. Carbon materials have attracted widespread attention due to their excellent properties, and the fabrication of all-carbon integrated circuits has become a new development direction for integrated circuits.
Due to its unique two-dimensional material structure and excellent electrical properties, graphene has advantages in large-area growth and circuit connection, which makes it a suitable carbon material for the preparation of all carbon integrated circuits. TICNN uses epitaxial graphene and CVD graphene as the functional part, and the patterned conductive carbon materials obtained by electron beam-induced growth act as the electrode and peripheral connection part. Based on the idea of full carbonization of traditional semiconductor devices, we combine the above materials and processes to prepare graphene-based all-carbon devices (such as diodes and field effect transistors). Finally, relying on the basis of the single discrete graphene-based all-carbon devices prepared above, we fabricate graphene-based all-carbon RF and logic integrated circuits through reasonable circuit design and integration.
Fig.1 (a) Schematic of the process flow for carbon electrode fabrication; (b)The contact between graphene-carbon electrode and graphene-metal; (c) Schematic diagram of graphene-based all-carbon circuit design; (d)The optical image of graphene-based all-carbon FET.
