PanScan Freedom employed cryogen-free closed cryostat system, the lowest temperature of the sample stage can reach 8.6 K and the chamber vacuum below 10-11 mbar. The system compatible with STM and Q-Plus AFM modes, which can both visualize the surface structures with atomic scale resolution and measure electrical properties of conductor and insulator.
Research direction based on STM:
1. To characterize transport properties of low dimensional materials
1） Study on edge state of graphene grown by epitaxial growth of SiC with different crystal planes.
2） The effect of temperature on α-RuCl3: surface structure and electronical property.
3） Study on the shape and size of colloidal quantum dots and their corresponding one-electron energy level structure.
4）Non-Invasive Nanoscale Potentiometry and Ballistic Transport in graphene.
2. Prepare and test qPlus AFM tip
The research content includes the preparation of the tip of SPM based on qPlus technology, the corrosion condition of tungsten tip and the effect of qPlus sensor added mass on Q value are systematically studied. By using the self-designed tip, the function of AFM and STM can be combined, which multi-channel signal detection can be carried out for samples with different electrical properties to obtain more information of the material.
3. Home-made Molecular Beam Epitaxy (MBE)
MBE equipment is independently developed and designed by our lab, which can be combined with STM for in-situ growth and characterization. The design of the system conforms to the ultra-high vacuum design standard. There are four evaporation sources in chamber, which could achieve different materials growth. The heating temperature of the evaporation source ranges from 0 to 1000 ℃ and the heating temperature can be precisely controlled, thereby achieve the stable growth of single atomic layer thickness of the film.
